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HfO2絶縁膜を用いたMoS2FETにおける実効移動度の評価
(Characterization of effective mobility in MoS2FET with HfO2 high-k insulator)
2015年第62回応用物理学会春期学術講演会. March 11, 2015-March 14, 2015.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 04:32:31 +0900 Updated at: 2017-07-10 22:04:31 +0900