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InGaN/GaN量子井戸構造におけるIn組成、格子歪および内部電界のマッピング
(Mapping In concentration, strain and internal electric field in InGaN/GaN quantum well structure)
第51回応用物理学関係連合学術講演会. March 28, 2004-March 31, 2004.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 11:30:57 +0900 Updated at: 2017-07-10 18:57:47 +0900