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Channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistor
Hasselt Diamond Workshop 2026 - SBDD XXX. March 04, 2026-March 06, 2026. Invited
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2026-03-12 03:12:04 +0900 Updated at: 2026-03-12 03:12:04 +0900