HOME > Presentation > Detail環境半導体BaSi2の高圧物性(High-pressure X-ray diffraction study of BaSi2)水野貴, 森嘉, 受川浩士, 財部健一, 今井 基晴. 日本物理学会. March 24, 2005-March 27, 2005.NIMS author(s)IMAI, MotoharuFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-01-08 04:01:57 +0900Updated at: 2017-07-10 19:17:21 +0900