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AuthorIRISAWA Toshifumi, ODA Minoru, TEZUKA Tsutomu, MORIYAMA Yoshihiko, MAEDA Tetsuro, MIEDA Eiko, JEVASUWAN, Wipakorn, ICHIKAWA Osamu, HATA Masahiko, MIYAMOTO Yasuyuki.
TitleMOVPE再成長により形成した(111)B面を有する高移動度三角形状InGaAs-OI nMOSFETs
(High Electron Mobility Triangular InGaAs-OI nMOSFETs with (111)B Side Surface Formed by MOVPE Regrowth)
Event nameTechnical comittee on Silicon Device Meeting (SDM)
Year of publication2014
LanguageJapanese
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