HOME > Presentation > DetailField effect transistor based on diamond/h-BN heterostructuresYAMAGUCHI, Takahide. European Materials Research Society, 2019 Fall meeting. 2019. InvitedNIMS author(s)YAMAGUCHI, TakahideFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2019-10-25 03:00:23 +0900Updated at: 2024-03-05 12:21:13 +0900