HOME > Presentation > DetailElectronic structures of polar semiconductors of ZnO and GaN studied by polarization dependent hard X-ray photoemission spectroscopy上田 茂典, 大澤 健男, 大橋 直樹. 2015 MRS Fall Meeting. November 29, 2015-December 04, 2015.NIMS author(s)UEDA, ShigenoriOHSAWA, TakeoOHASHI, NaokiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-02-14 10:55:02 +0900Updated at: 2017-07-10 22:11:27 +0900