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硬X線光電子分光による EuNi2(Si1-xGex)2 (x=0.70, 0.79, 0.82) の温度誘起価数転移の研究
(Temperature induced valence transition in EuNi2(Si1-xGex)2 (x=0.70, 0.79, 0.82) studied by hard X-ray photoemission)
日本物理学会2013年秋季大会. September 25, 2013-September 28, 2013.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 05:10:10 +0900Updated at: 2017-07-10 21:40:25 +0900