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液滴エピタキシー成長GaAs量子ドットにおけるPLピークエネルギー温度依存性と人工濡れ層の関係
(Relationship between temperature dependence of photoluminescence peak energy and artificial wetting layer in GaAs quantum dots fabricated by droplet epitaxy)
2019年第80回応用物理学会秋季学術講演会. September 18, 2019-September 21, 2019.
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Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2019-10-05 03:00:24 +0900 Updated at: 2019-10-05 03:00:24 +0900