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Al2O3絶縁膜を用いたトップゲート型MoS2FETの試作
(Fabrication of top-gated MoS2 FET with Al2O3 Insulator)
2014年第75回応用物理学会秋季学術講演会. September 17, 2014-September 20, 2014.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 11:38:45 +0900Updated at: 2017-07-10 21:55:45 +0900