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全反射HAXPESによるアモルファス酸化物半導体の 価電子帯直上欠陥の深さ方向分布
(Depth analysis of near-valence band maximum states in amorphous oxide semiconductor by total reflection HAXPES)

K. Ide, M. Ota, Y. Kishida, T. Katase, H. Hiramatsu, 上田 茂典, 雲見日出也, 細野秀雄, 神谷利夫.
第65回応用物理学会春季学術講演会. March 17, 2018-March 20, 2018. Invited

NIMS author(s)


Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at: 2018-01-19 22:07:51 +0900Updated at: 2024-03-05 12:20:31 +0900

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