HOME > Presentation > DetailCharacterization of effective mobility by split C-V technique in MoS2FETs with high-k/metal gate森 貴洋, 二之宮成樹, 内田紀行, 久保利隆, 渡辺 英一郎, 津谷 大樹, 森山 悟士, 田中正俊, 安藤 淳. IEEE NANO 2015. 2015.NIMS author(s)WATANABE, EiichiroTSUYA, DaijuFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-01-08 04:08:35 +0900Updated at: 2017-07-10 22:09:53 +0900