HOME > Presentation > DetailアルミナトップゲートMoS2 MOSFETの電気伝導特性評価(Investigation of electrical characteristics on top-gate MoS2 MOSFETs with high-k Al2O3 dielectric)二之宮成樹, 森 貴洋, 内田紀行, 渡辺 英一郎, 津谷 大樹, 森山 悟士, 田中正俊, 安藤 淳. 27th International Microprocesses and Nanotechnology Conference. 2014.NIMS author(s)WATANABE, EiichiroTSUYA, DaijuFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-02-14 11:08:50 +0900Updated at: 2017-07-10 21:58:01 +0900