HOME > 口頭発表 > 書誌詳細A New Understanding of Sublimation Growth in SiC and a Proposed Furnace Structure Based on Si-C Phase RelationsTakehisa MINOWA, ABE, Taichi. ICSCRM2026 (23rd International Conference on Silicon Carbide and Related Materials). 2026年09月27日-2026年10月02日.NIMS著者阿部 太一Materials Data Repository (MDR)上の本文・データセットMDRavailable A New Understanding of the Growth Mechanism of Sublimation-Type SiC Single Crystals and Recommendations for New Manufacturing Equipment 作成時刻: 2026-10-03 03:10:03 +0900 更新時刻: 2026-10-03 03:10:03 +0900