HOME > Published patent applications > Detail[Published patent application] 四角形の断面を有する単結晶シリコンの育成方法2011-10-06. 2011195414 (Google Patents) , 5464429NIMS author(s)KITAZAWA, HideakiCreated at :2023-07-22 21:45:30 +0900 Updated at :2023-07-22 21:45:30 +0900