MOS特性を発現する極薄シリコン酸化膜の製造方法 | SAMURAI, NIMS Researchers Directory Service

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[Published patent application] MOS特性を発現する極薄シリコン酸化膜の製造方法

1999-04-30. H11121448 (Google Patents) , 3345636

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Created at :2023-07-22 21:44:35 +0900 Updated at :2023-07-22 21:44:35 +0900

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