Electrical spectroscopy of intervalley relaxation in
                    <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML">
                      <mml:msub>
                        <mml:mi>WSe</mml:mi>
                        <mml:mn>2</mml:mn>
                      </mml:msub>
                    </mml:math>
                    transistors

Katsunori Wakabayashi; Katsunori Wakabayashi

doi:10.1103/p8mx-dr9j

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Electrical spectroscopy of intervalley relaxation in WSe 2 transistors

Katsunori Wakabayashi.

Physical Review B 114 [10] 105421. 2026.

https://doi.org/10.1103/p8mx-dr9j

Open Access Materials Data Repository (MDR)

NIMS author(s)

WAKABAYASHI, Katsunori

Introduction to new articles

Electrical Readout of Intervalley Relaxation in WSe2 Transistors

This theoretical study shows that intervalley redistribution in multilayer WSe2 transistors leaves characteristic signatures in transconductance, gate-step transients, and sweep-rate-dependent hysteresis. These electrical responses provide a route to determine the intervalley relaxation time, a quantity previously accessed mainly by ultrafast optical spectroscopy, using standard transport measurements.

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MDRavailable Electrical spectroscopy of intervalley relaxation in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi>WSe</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math> transistors

Created at: 2026-09-01 03:06:11 +0900 Updated at: 2026-10-03 07:09:41 +0900