The liquid compound bis(ethylcyclopentadienyl)tin, Sn(EtCp)2, was synthesized and exhibited several notable characteristics, including a vapor pressure suitable for use as a precursor and thermal stability up to 230 ℃. Using it as a precursor and O2 plasma as an oxidant, SnO2 thin films can be deposited by atomic layer deposition (ALD). A self-limiting reaction was confirmed with no nucleation delay for pulse times of 10 and 45 s for Sn(EtCp)2 and O2 plasma, respectively, at a growth temperature of 200 ℃. The growth per cycle (GPC) was 0.20 nm/ cycle, which is higher than that of conventional precursors. Cross-sectional transmission electron microscopy revealed that the SnO2 film was uniform and polycrystalline, even though it was deposited at 200 ℃. X-ray diffraction analysis revealed that the film had a tetragonal rutile SnO2 structure with a (110) preferred orientation. Sn(EtCp)2 is a promising precursor for depositing high-quality SnO2 films with a stoichiometric composition, high purity, and high crystallinity, even at low temperatures.