| 10763件の論文が見つかりました。論文は出版年月日順に表示しています。（ヘルプ） | |
|---|
| 佐藤 直大, 高際 良樹, 桑原 彰秀, 内田 紀行, 木村 薫. 高パワーファクターを有するRuGa2とRuAl2の第一原理フォノン計算とラマン測定. 日本金属学会誌. 79 [11] (2015) 591-596 10.2320/jinstmet.ja201510 Open Access | |
| 飛田 一樹, 佐藤 直大, 北原 功一, 高際 良樹, 木村 薫. 特異な構造に起因するFe2Al5とFe4Al13の低格子熱伝導率と熱電材料としての可能性. 日本金属学会誌. 79 [12] (2015) 672-676 10.2320/jinstmet.jaw201504 Open Access | |
| Manoj B. Gawande, Radek Zboril, Victor Malgras, Yusuke Yamauchi. Integrated nanocatalysts: a unique class of heterogeneous catalysts. Journal of Materials Chemistry A. 3 [16] (2015) 8241-8245 10.1039/c5ta00119f | |
| Heng Wang, Xianlong Cao, Yoshiki Takagiwa, G. Jeffrey Snyder. Higher mobility in bulk semiconductors by separating the dopants from the charge-conducting band – a case study of thermoelectric PbSe. Materials Horizons. 2 [3] (2015) 323-329 10.1039/c5mh00021a | |
| Y. Takagiwa, T. Yoshida, D. Yanagihara, K. Kimura. Thermoelectric Properties of Pseudogap Ti10Ru19B8 and Ti9TM2Ru18B8 (TM: Cr-Cu) Compounds. Journal of Electronic Materials. 44 [6] (2015) 1483-1490 10.1007/s11664-014-3423-8 | |
| Y. Takagiwa, S. Utada, I. Kanazawa, K. Kimura. MoSi2-type narrow band gap intermetallic compound Al6Re5Si4 as a thermoelectric material. Journal of Materials Chemistry C. 3 [40] (2015) 10422-10429 10.1039/c5tc01608h | |
| Y. Takagiwa, K. Kimura, K. Sawama, T. Hiroto, K. Nishio, R. Tamura. Thermoelectric properties of Tsai-type Au–Al–RE (RE: Yb, Tm, Gd) quasicrystals and approximants. Journal of Alloys and Compounds. 652 (2015) 139-144 10.1016/j.jallcom.2015.08.081 | |
| Motoharu Imai, Yukihiro Isoda, Haruhiko Udono. Thermal expansion of semiconducting silicides β-FeSi 2 and Mg 2 Si. Intermetallics. 67 (2015) 75-80 10.1016/j.intermet.2015.07.015 | |
| F. Sun, Y.F. Gu, J.B. Yan, Z.H. Zhong, M. Yuyama. Dislocation motion in a NI-Fe-based superalloy during creep–rupture beyond 700°C. Materials Letters. 159 (2015) 241-244 10.1016/j.matlet.2015.06.076 | |
| Gwan-Hyoung Lee, Xu Cui, Young Duck Kim, Ghidewon Arefe, Xian Zhang, Chul-Ho Lee, Fan Ye, Kenji Watanabe, Takashi Taniguchi, Philip Kim, James Hone. Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage. ACS Nano. 9 [7] (2015) 7019-7026 10.1021/acsnano.5b01341 | |
