Improved Strain Engineering of Monolayer Transition Metal Dichalcogenides via Van der Waals Epitaxy on Graphene/SiC(0001)
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Improved strain engineering in monolayer transition metal dichalcogenides grown on graphene/SiC(0001)

Introducing lattice strain into transition metal dichalcogenide monolayers can modulate their properties and functionalities. In this study, we found that monolayer WSe2 directly grown on a graphene/SiC(0001) substrate exhibits an extremely narrow photoluminescence linewidth due to uniform strain. This is attributed to the thermal expansion coefficient mismatch between WSe2 and SiC and the enhanced strain homogeneity by the graphene layer. Furthermore, monolayer MoS2 grown on the same substrate exhibited high catalytic activity for the hydrogen evolution reaction.
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Created at: 2025-08-29 03:09:57 +0900 Updated at: 2026-10-12 04:36:44 +0900


