Subgap states in transparent amorphous oxide semiconductor, In&#8211;Ga&#8211;Zn&#8211;O, observed by bulk sensitive x-ray photoelectron spectroscopy

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Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy
(Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy)

Kenji Nomura, Toshio Kamiya, Hiroshi Yanagi, Eiji Ikenaga, Ke Yang, Keisuke Kobayashi, Masahiro Hirano, Hideo Hosono.

作成時刻: 2016-05-24 15:48:51 +0900 更新時刻: 2026-10-30 08:49:43 +0900