Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy
(Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy)
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作成時刻 :2016-05-24 15:48:51 +0900 更新時刻 :2022-09-05 12:13:05 +0900