Construction of a metal–organic monolayer–semiconductor junction on a hydrogen-terminated Si(111) surface via Si–C covalent linkage and its electrical properties | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Construction of a metal–organic monolayer–semiconductor junction on a hydrogen-terminated Si(111) surface via Si–C covalent linkage and its electrical properties

K. Uosaki, H. Fukumitsu, T. Masuda, D. Qu.

Physical Chemistry Chemical Physics 16 [21] 9960. 2014.

https://doi.org/10.1039/c3cp54619e

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作成時刻: 2016-05-24 17:25:53 +0900 更新時刻: 2026-10-08 06:21:18 +0900

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