HOME > 論文 > 書誌詳細Effects of barium incorporation into HfO2 gate dielectrics on reduction in charged defects: First-principles StudyNaoto Umezawa. Applied Physics Letters 94 [2] 022903. 2009.https://doi.org/10.1063/1.3070534 NIMS著者Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 15:42:04 +0900 更新時刻: 2026-11-02 05:43:54 +0900
