Redox Reactions at Cu,Ag/Ta2O5Interfaces and the Effects of Ta2O5Film Density on the Forming Process in Atomic Switch Structures
(Redox reactions at Cu,Ag/Ta2O5 interfaces and the effects of Ta2O5 film density on the forming process in atomic switch structures)
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2016-05-24 17:36:26 +0900 更新時刻: 2026-09-29 07:38:35 +0900
