Improvement of Ferroelectric Properties in Hf
 0.5
 Zr
 0.5
 O
 2
 Capacitors Using Laminated ITO Electrodes

Hiroyuki Yamada; Takuro Nagai; Jun Usami; Yoshikiyo Toyosaki; Akihito Sawa; Hiroyuki Yamada; Takuro Nagai; Jun Usami; Yoshikiyo Toyosaki; Akihito Sawa

doi:10.1021/acsaem.5c03379

HOME > Article > Detail

Improvement of Ferroelectric Properties in Hf _0.5 Zr _0.5 O ₂ Capacitors Using Laminated ITO Electrodes

Hiroyuki Yamada, Takuro Nagai, Jun Usami, Yoshikiyo Toyosaki, Akihito Sawa.

ACS Applied Energy Materials 9 [5] 2494-2502. 2026.

https://doi.org/10.1021/acsaem.5c03379

NIMS author(s)

NAGAI, Takuro

Introduction to new articles

Improvement of ferroelectric properties in Hf0.5Zr0.5O2 capacitors using laminated ITO electrodes

HfO2 ferroelectrics have attracted much interest due to their excellent compatibility with Si-based semiconductor technology; however, reliability issues have been encountered in practical applications. One is the wake-up effect: the electric field cycling of the polarization measurement is required until the remanent polarization is maximized. We demonstrated a remarkable improvement in the ferroelectric properties of Hf0.5Zr0.5O2 capacitors using laminated indium-tin-oxide (ITO) electrodes.

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2026-03-12 03:11:43 +0900 Updated at: 2026-10-19 04:31:59 +0900