Carrier doping effect for transport properties of a spin-orbit Mott insulator Ba<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>IrO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>4</mml:mn></mml:msub></mml:math> | SAMURAI, NIMS Researchers Directory Service

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Carrier doping effect for transport properties of a spin-orbit Mott insulator Ba2IrO4
(Carrier doping effect for transport properties of a spin-orbit Mott insulator Ba2IrO4)

H. Okabe, M. Isobe, E. Takayama-Muromachi, N. Takeshita, J. Akimitsu.

Physical Review B 88 [7] 075137. 2013.

https://doi.org/10.1103/physrevb.88.075137

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Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-05-24 17:15:39 +0900 Updated at: 2026-10-08 06:39:36 +0900

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