HOME > Article > DetailLow RF loss and low dislocation density of GaN grown on high-resistivity Si substratesCheng Ma, Xuelin Yang, Jianfei Shen, Danshuo Liu, Zidong Cai, Zhenghao Chen, Jun Tang, Liwen Sang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen. Applied Physics Express 15 [3] 031003. 2022.https://doi.org/10.35848/1882-0786/ac5260 NIMS author(s)Fulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2022-03-03 03:25:12 +0900 Updated at: 2026-10-08 06:53:36 +0900
