HOME > 論文 > 書誌詳細The unification of filament and interfacial resistive switching mechanisms for titanium dioxide based memory devicesF. Zhang, X. M. Li, X. D. Gao, L. Wu, X. Cao, X. J. Liu, R. Yang. Journal of Applied Physics 109 [10] 104504. 2011.https://doi.org/10.1063/1.3583669 NIMS著者Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 16:43:13 +0900 更新時刻: 2026-10-30 07:22:31 +0900
