Origins of Hole Doping and Relevant Optoelectronic Properties of Wide Gap p-Type Semiconductor, LaCuOSe
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2016-05-24 16:11:52 +0900 Updated at: 2026-11-09 06:11:51 +0900
