HOME > 論文 > 書誌詳細Detection limit of defect-induced strain in GaN evaluated by valence EELS and correlated structural analysisShunsuke Yamashita, Jun Kikkawa, Susumu Kusanagi, Ichiro Nomachi, Ryoji Arai, Yuya Kanitani, Koji Kimoto, Yoshihiro Kudo. Microscopy 75 [1] 29-37. 2026.https://doi.org/10.1093/jmicro/dfaf034 Open Access Materials Data Repository (MDR) NIMS著者吉川 純木本 浩司Materials Data Repository (MDR)上の本文・データセットMDRavailable Detection limit of defect-induced strain in GaN evaluated by valence EELS and correlated structural analysis 作成時刻: 2026-02-18 03:08:22 +0900 更新時刻: 2026-09-25 04:33:48 +0900
