Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor

Junghwan Kim; Takumi Sekiya; Norihiko Miyokawa; Naoto Watanabe; Koji Kimoto; Keisuke Ide; Yoshitake Toda; Shigenori Ueda; Naoki Ohashi; Hidenori Hiramatsu; Hideo Hosono; Toshio Kamiya

doi:10.1038/am.2017.20

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Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor

Junghwan Kim, Takumi Sekiya, Norihiko Miyokawa, Naoto Watanabe, Koji Kimoto, Keisuke Ide, Yoshitake Toda, Shigenori Ueda, Naoki Ohashi, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya.

NPG Asia Materials 9 [3] e359-e359. 2017.

https://doi.org/10.1038/am.2017.20

Open Access Springer Nature (Publisher)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2017-05-08 19:04:50 +0900更新時刻: 2024-03-30 00:18:00 +0900