Growth Behavior of Cubic Boron Nitride Films in a Two-Step Process: Changing Bias Voltage, Gas Composition, and Substrate Temper | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

HOME > 論文 > 書誌詳細

Growth Behavior of Cubic Boron Nitride Films in a Two-Step Process: Changing Bias Voltage, Gas Composition, and Substrate Temper
(2段階法でのcBN薄膜の成長挙動：バイアス変化、ガス組成、基板温度の影響)

W.Zhang, MATSUMOTO, Seiichiro, Q.Li, I. Bello, S.T.Lee.

Advanced Functional Materials 12 [4] 250. 2002.

https://doi.org/10.1002/1616-3028(20020418)12:4<250::aid-adfm250>3.0.co;2-l

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-05-24 11:49:06 +0900 更新時刻: 2026-09-23 04:31:49 +0900

▲ページトップへ移動