HOME > 論文 > 書誌詳細Effects of capping HfO2 with multivalent oxides toward reducing the number of charged defectsNaoto Umezawa. Applied Physics Letters 96 [16] 162906. 2010.https://doi.org/10.1063/1.3409222 NIMS著者Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 16:04:18 +0900 更新時刻: 2026-10-30 08:56:46 +0900
