HOME > 論文 > 書誌詳細Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdownHayata Fukushima, Shigeyoshi Usami, Masaya Ogura, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano. Applied Physics Express 12 [2] 026502. 2019.https://doi.org/10.7567/1882-0786/aafdb9 NIMS著者Materials Data Repository (MDR)上の本文・データセット作成時刻: 2021-06-10 03:00:19 +0900 更新時刻: 2026-10-08 05:53:11 +0900
