A DFT study of BeX (X = S, Se, Te) semiconductor: Modified Becke Johnson (mBJ) potential
(A DFT Study of BeX (X = S, Se, Te) Semiconductor: Modified Becke Johnson (mBJ) Potential)
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2016-05-24 17:50:52 +0900 更新時刻: 2026-11-04 06:21:13 +0900