Effect of Thermal Boundary Resistance between the Interconnect Metal and Dielectric Interlayer on Temperature Increase of Interconnects in Deeply Scaled VLSI

Tianzhuo Zhan; Kaito Oda; Shuaizhe Ma; Motohiro Tomita; Zhicheng Jin; Hiroki Takezawa; Kohei Mesaki; Yen-Ju Wu; Yibin Xu; Takashi Matsukawa; Takeo Matsuki; Takanobu Watanabe; Tianzhuo Zhan; Kaito Oda; Shuaizhe Ma; Motohiro Tomita; Zhicheng Jin; Hiroki Takezawa; Kohei Mesaki; Yen-Ju Wu; Yibin Xu; Takashi Matsukawa; Takeo Matsuki; Takanobu Watanabe

doi:10.1021/acsami.0c03010

Effect of Thermal Boundary Resistance between the Interconnect Metal and Dielectric Interlayer on Temperature Increase of Interconnects in Deeply Scaled VLSI

Tianzhuo Zhan, Kaito Oda, Shuaizhe Ma, Motohiro Tomita, Zhicheng Jin, Hiroki Takezawa, Kohei Mesaki, Yen-Ju Wu, Yibin Xu, Takashi Matsukawa, Takeo Matsuki, Takanobu Watanabe.

ACS Applied Materials & Interfaces 12 [19] 22347-22356. 2020.

https://doi.org/10.1021/acsami.0c03010

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2020-05-27 03:00:22 +0900 Updated at: 2026-10-07 04:53:05 +0900