HOME > Article > DetailHall hole mobility in boron-doped homoepitaxial diamondJ. Pernot, P. N. Volpe, F. Omnès, P. Muret, V. Mortet, K. Haenen, T. Teraji. Physical Review B 81 [20] 205203. 2010.https://doi.org/10.1103/physrevb.81.205203 NIMS author(s)Fulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-05-24 16:04:56 +0900Updated at: 2024-03-31 18:08:51 +0900
