A micro crystal growth on a Se-terminated GaAlAs surface for the quantum well box structure by sequential supply of Ga and As mo | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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A micro crystal growth on a Se-terminated GaAlAs surface for the quantum well box structure by sequential supply of Ga and As mo

N.Koguchi, N.Koguchi, N.Koguchi, N.Koguchi.

APPl.Phys.Lett. 61 2052. 1992.

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作成時刻: 2016-05-24 11:22:09 +0900更新時刻: 2017-01-08 00:03:25 +0900

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