HOME > 論文 > 書誌詳細Ultrahigh‐speed growth of GaN by hydride vapor phase epitaxy(HVPE法によるGaNの超高速成長)Takehiro Yoshida, Yuichi Oshima, Kazutoshi Watanabe, Tadayoshi Tsuchiya, Tomoyoshi Mishima. physica status solidi c 8 [7-8] 2110-2112. 2011.https://doi.org/10.1002/pssc.201000953 NIMS著者Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 16:36:02 +0900更新時刻: 2024-03-31 14:47:39 +0900
