Effects of Al doping and annealing on chemical states and band diagram of Y2O3∕Si gate stacks studied by photoemission and x-ray absorption spectroscopy

Satoshi Toyoda; Jun Okabayashi; Makoto Komatsu; Masaharu Oshima; Dong-Ick Lee; Shiyu Sun; Yun Sun; Piero A. Pianetta; Dmitry Kukuruznyak; Toyohiro Chikyow

doi:10.1116/1.3259869

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Effects of Al doping and annealing on chemical states and band diagram of Y2O3∕Si gate stacks studied by photoemission and x-ray absorption spectroscopy

Satoshi Toyoda, Jun Okabayashi, Makoto Komatsu, Masaharu Oshima, Dong-Ick Lee, Shiyu Sun, Yun Sun, Piero A. Pianetta, Dmitry Kukuruznyak, Toyohiro Chikyow.

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 28 [1] 16-19. 2010.

https://doi.org/10.1116/1.3259869

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作成時刻: 2016-05-24 16:23:48 +0900更新時刻: 2024-03-31 13:11:57 +0900