Low interface state densities at Al<sub>2</sub>O<sub>3</sub>/GaN interfaces formed on vicinal polar and non-polar surfaces | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Low interface state densities at Al₂O₃/GaN interfaces formed on vicinal polar and non-polar surfaces

Yuto Ando, Kentaro Nagamatsu, Manato Deki, Noriyuki Taoka, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Tohru Nakamura, Hiroshi Amano.

Applied Physics Letters 117 [10] 102102. 2020.

https://doi.org/10.1063/5.0010774

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作成時刻: 2021-06-10 03:00:20 +0900 更新時刻: 2026-10-30 06:54:50 +0900

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