Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates

Mei Yin Chan; Katsuyoshi Komatsu; Song-Lin Li; Yong Xu; Peter Darmawan; Hiromi Kuramochi; Shu Nakaharai; Alex Aparecido-Ferreira; Kenji Watanabe; Takashi Taniguchi; Kazuhito Tsukagoshi; Mei Yin Chan; Katsuyoshi Komatsu; Song-Lin Li; Yong Xu; Peter Darmawan; Hiromi Kuramochi; Shu Nakaharai; Alex Aparecido-Ferreira; Kenji Watanabe; Takashi Taniguchi; Kazuhito Tsukagoshi

doi:10.1039/c3nr03220e

Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates

Mei Yin Chan, Katsuyoshi Komatsu, Song-Lin Li, Yong Xu, Peter Darmawan, Hiromi Kuramochi, Shu Nakaharai, Alex Aparecido-Ferreira, Kenji Watanabe, Takashi Taniguchi, Kazuhito Tsukagoshi.

Nanoscale 5 [20] 9572. 2013.

https://doi.org/10.1039/c3nr03220e

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-05-24 17:10:26 +0900 Updated at: 2026-10-08 04:51:18 +0900