Roles of Carrier Doping, Band Gap, and Electron Relaxation Time in the Boltzmann Transport Calculations of a Semiconductor’s Thermoelectric Properties | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

HOME > 論文 > 書誌詳細

Roles of Carrier Doping, Band Gap, and Electron Relaxation Time in the Boltzmann Transport Calculations of a Semiconductor’s Thermoelectric Properties

Yukari Katsura, Hidenori Takagi, Kaoru Kimura.

MATERIALS TRANSACTIONS 59 [7] 1013-1021. 2018.

https://doi.org/10.2320/matertrans.e-m2018813

NIMS著者

桂ゆかり

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2024-09-07 03:13:37 +0900更新時刻: 2024-09-08 03:13:35 +0900

▲ページトップへ移動