Roles of Carrier Doping, Band Gap, and Electron Relaxation Time in the Boltzmann Transport Calculations of a Semiconductor’s Thermoelectric Properties | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Roles of Carrier Doping, Band Gap, and Electron Relaxation Time in the Boltzmann Transport Calculations of a Semiconductor’s Thermoelectric Properties

Yukari Katsura, Hidenori Takagi, Kaoru Kimura.

MATERIALS TRANSACTIONS 59 [7] 1013-1021. 2018.

https://doi.org/10.2320/matertrans.e-m2018813

Open Access Japan Institute of Metals (Publisher) Materials Data Repository (MDR)

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MDRavailable Roles of Carrier Doping, Band Gap, and Electron Relaxation Time in the Boltzmann Transport Calculations of a Semiconductor’s Thermoelectric Properties

作成時刻: 2024-09-07 03:13:37 +0900 更新時刻: 2026-10-03 07:06:09 +0900

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