Anisotropic high-k deposition for gate-last processing of metal-oxide-semiconductor field-effect transistor utilizing electron-cyclotron-resonance plasma sputtering | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Anisotropic high-k deposition for gate-last processing of metal-oxide-semiconductor field-effect transistor utilizing electron-cyclotron-resonance plasma sputtering

Yoshiaki Kikuchi, Jun Gao, Takahiro Sano, Shun-ichiro Ohmi.

Thin Solid Films 520 [7] 2989-2993. 2012.

https://doi.org/10.1016/j.tsf.2011.11.055

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作成時刻: 2026-09-01 18:18:50 +0900 更新時刻: 2026-10-03 07:10:20 +0900

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