Polarity inversion during halide VPE growth of GaN on GaAs(111)B-As surface at high temperatures
(高温でのGaAs(111)-B-As表面へのGaNのハライドVPEにおける極性不変性)
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2016-05-24 11:50:21 +0900 Updated at: 2018-12-15 00:02:49 +0900