Electronic structure of YbGa<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow /><mml:mrow><mml:mn>1</mml:mn><mml:mo>.</mml:mo><mml:mn>15</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Si<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow /><mml:mrow><mml:mn>0</mml:mn><mml:mo>.</mml:mo><mml:mn>85</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>and YbGa<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow /><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>Ge<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow /><mml:mrow><mml:mn>2</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>probed by resonant x-ray emission and photoelectron spectroscopies

Hitoshi Yamaoka; Ignace Jarrige; Naohito Tsujii; Motoharu Imai; Jung-Fu Lin; Masaharu Matsunami; Ritsuko Eguchi; Masashi Arita; Kenya Shimada; Hirofumi Namatame; Masaki Taniguchi; Munetaka Taguchi; Yasunori Senba; Haruhiko Ohashi; Nozomu Hiraoka; Hirofumi Ishii; Ku-Ding Tsuei; Hitoshi Yamaoka; Ignace Jarrige; Naohito Tsujii; Motoharu Imai; Jung-Fu Lin; Masaharu Matsunami; Ritsuko Eguchi; Masashi Arita; Kenya Shimada; Hirofumi Namatame; Masaki Taniguchi; Munetaka Taguchi; Yasunori Senba; Haruhiko Ohashi; Nozomu Hiraoka; Hirofumi Ishii; Ku-Ding Tsuei

doi:10.1103/physrevb.83.104525

Electronic structure of YbGa1.15Si0.85and YbGaxGe2−xprobed by resonant x-ray emission and photoelectron spectroscopies
(Electronic structure of YbGa1.15Si0.85and YbGaxGe2−xprobed by resonant x-ray emission and photoelectron spectroscopies)

Hitoshi Yamaoka, Ignace Jarrige, Naohito Tsujii, Motoharu Imai, Jung-Fu Lin, Masaharu Matsunami, Ritsuko Eguchi, Masashi Arita, Kenya Shimada, Hirofumi Namatame, Masaki Taniguchi, Munetaka Taguchi, Yasunori Senba, Haruhiko Ohashi, Nozomu Hiraoka, Hirofumi Ishii, Ku-Ding Tsuei.

Physical Review B 83 [10] 104525. 2011.

https://doi.org/10.1103/physrevb.83.104525

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-05-24 16:13:02 +0900 Updated at: 2026-09-29 06:16:35 +0900

Electronic structure of YbGa1.15Si0.85and YbGaxGe2−xprobed by resonant x-ray emission and photoelectron spectroscopies(Electronic structure of YbGa1.15Si0.85and YbGaxGe2−xprobed by resonant x-ray emission and photoelectron spectroscopies)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Electronic structure of YbGa1.15Si0.85and YbGaxGe2−xprobed by resonant x-ray emission and photoelectron spectroscopies
(Electronic structure of YbGa1.15Si0.85and YbGaxGe2−xprobed by resonant x-ray emission and photoelectron spectroscopies)