Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

HOME > 論文 > 書誌詳細

Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy

Kenji Nomura, Toshio Kamiya, Eiji Ikenaga, Hiroshi Yanagi, Keisuke Kobayashi, Hideo Hosono.

Journal of Applied Physics 109 [7] 073726. 2011.

https://doi.org/10.1063/1.3560769

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-05-24 16:43:48 +0900 更新時刻: 2026-10-08 06:00:22 +0900

▲ページトップへ移動