Ga-S-Ga bridge bond formation in in-situ s-treated GaAs(001) surface observed by synchrotron radiation photoemission spectroscop
(放射光電子分光法X線吸収端微細構造X線定在波法で観察した真空中硫黄処理GaAs(001)表面におけるGa-S-Gaブリッジ結合形成)
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2016-05-24 11:38:06 +0900 Updated at: 2018-12-15 00:42:05 +0900
