In Situ Growth of Isotopically Enriched 28Si Nanowires Using the Floating -Zone(FZ) Melting Method | SAMURAI, NIMS Researchers Directory Service

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In Situ Growth of Isotopically Enriched 28Si Nanowires Using the Floating -Zone(FZ) Melting Method
(FZ法で同位体シリコンナノワイアの製成)

Quanli HU, Guoqing LI, Hiroshi SUZUKI, ARAKI, Hiroshi, Tetsuji NODA.

JJAP Letter . 2001.

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2022-09-05 11:06:58 +0900 Updated at: 2022-09-05 11:06:58 +0900

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