The impact of growth method on the structural and electronic properties of Nb:Bi
                    <sub>2</sub>
                    WO
                    <sub>6</sub>
                    thin films for high-power pn junction applications

Ichiro Takakuwa; Ryusuke Seino; Seiya Suzuki; Keishi Nishio; Shutaro Asanuma; Yoshihiro Nemoto; Yuki Nishimiya; Yoichi Higashi; Toshimitsu Ito; Makoto Minohara; Ichiro Takakuwa; Ryusuke Seino; Seiya Suzuki; Keishi Nishio; Shutaro Asanuma; Yoshihiro Nemoto; Yuki Nishimiya; Yoichi Higashi; Toshimitsu Ito; Makoto Minohara

doi:10.1039/d5ma00975h

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The impact of growth method on the structural and electronic properties of Nb:Bi ₂ WO ₆ thin films for high-power pn junction applications

Ichiro Takakuwa, Ryusuke Seino, Seiya Suzuki, Keishi Nishio, Shutaro Asanuma, Yoshihiro Nemoto, Yuki Nishimiya, Yoichi Higashi, Toshimitsu Ito, Makoto Minohara.

Materials Advances 6 [23] 9104-9112. 2025.

https://doi.org/10.1039/d5ma00975h

Open Access Royal Society of Chemistry (RSC) (Publisher)

NIMS著者

根本善弘

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2026-08-26 03:06:22 +0900 更新時刻: 2026-09-28 05:57:36 +0900

The impact of growth method on the structural and electronic properties of Nb:Bi 2 WO 6 thin films for high-power pn junction applications

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

The impact of growth method on the structural and electronic properties of Nb:Bi ₂ WO ₆ thin films for high-power pn junction applications